型号:

IPB50N10S3L-16

RoHS:无铅 / 符合
制造商:Infineon Technologies描述:MOSFET N-CH 100V 50A TO263-3
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IPB50N10S3L-16 PDF
标准包装 1,000
系列 OptiMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 50A
开态Rds(最大)@ Id, Vgs @ 25° C 15.4 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大) 2.4V @ 60µA
闸电荷(Qg) @ Vgs 64nC @ 10V
输入电容 (Ciss) @ Vds 4180pF @ 25V
功率 - 最大 100W
安装类型 表面贴装
封装/外壳 TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装 PG-TO263-3
包装 带卷 (TR)
产品目录页面 1617 (CN2011-ZH PDF)
其它名称 IPB50N10S3L-16-ND
IPB50N10S3L-16INTR
SP000386183
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